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GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ≥ 0.9 μm

GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ≥ 0.9 μm

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Edge-emitting diodes with a GaAs saw-tooth superlattice as the active region operating with high efficiency at 300 K are reported. The saw-tooth superlattice active region of the device consists of alternating n- and p-type Dirac-delta-doped GaAs layers grown by molecular beam epitaxy. The superlattice bandgap energy is lower than that of the GaAs host material. The new superlattice diode emits monochromatic light at wavelengths λ ≥ 0.9 μm.

References

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      • E.F. Schubert , Y. Horikoshi , K. Ploog . Radiative electron-hole recombination in a new saw-tooth semiconductor super-lattice grown by MBE. Phys. Rev. B
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      • E.F. Schubert . Electronic sub-band structure in the V-shaped potential well of Dirac-delta doped GaAs. Solid State Commun.
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      • C. Weisbuch , R. Dingle , A.C. Gossard , W. Wiegmann . Optical characterization of interface disorder in GaAs-AlxGa1−x multi-quantum well structures. Solid State Commun. , 709 - 712
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850292
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