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Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE

Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE

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Disordering of MBE-grown InGaAs/InAlAs MQW (multiquantum well) superlattice structures by Zn-diffusion was studied for the first time. Optical measurements and sputtering Auger electron measurements revealed that the InGaAs/InAlAs MQW superlattice structure is easily disodered by Zn-diffusion. On the other hand, the MQW superlattice structure is stable against the thermal treatment up to 700°C.

References

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      • W.D. Laidig , J.W. Lee , P.K. Chiang , L.W. Simpson , S.M. Bedair . Disordering of an InxGa1−xAs-GaAs superlattice by Zn-diffusion. J. Appl. Phys. , 6382 - 6384
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      • Y. Kawamura , H. Asam , K. Wakita . InGaAs/InGaAlAs/ InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy. Electron. Lett. , 459 - 460
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      • Asahi, H., Kawamura, Y., Wakita, K.: `MBE-grown InGaAs/InAlAs MQW structures and InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes', 9th IEEE international semiconductor laser conference, August 1984, , p. 82–83.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850154
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