Measurement of field spectra of 1.3 μm InGaAsP DFB lasers
Measurement of field spectra of 1.3 μm InGaAsP DFB lasers
- Author(s): K. Kikuchi and T. Okoshi
- DOI: 10.1049/el:19850153
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- Author(s): K. Kikuchi 1 and T. Okoshi 1
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View affiliations
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Affiliations:
1: Department of Electronic Engineering, University of Tokyo, Tokyo, Japan
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Affiliations:
1: Department of Electronic Engineering, University of Tokyo, Tokyo, Japan
- Source:
Volume 21, Issue 6,
14 March 1985,
p.
217 – 218
DOI: 10.1049/el:19850153 , Print ISSN 0013-5194, Online ISSN 1350-911X
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Field spectra of 1.3 μm InGaAsP DFB lasers were measured for the first time using optical heterodyne detection. The lineshapes show very good agreement with theoretical curves given by four parameters which have been predicted by the FM noise measurement.
Inspec keywords: gallium arsenide; semiconductor junction lasers; indium compounds; III-V semiconductors; frequency modulation; optical noise measurement
Other keywords:
Subjects: Semiconductor lasers; Lasing action in semiconductors; Optical instruments and techniques; II-VI and III-V semiconductors; Optical variables measurement; Electrical conductivity of II-VI and III-V semiconductors
References
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