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High-power and high-speed GaAlAs-GaAs LEDs fabricated by MOCVD growth

High-power and high-speed GaAlAs-GaAs LEDs fabricated by MOCVD growth

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GaAlAs light-emitting diodes fabricated by a metalorganic chemical vapour deposition method exhibit high-power and high-speed response characteristics at least as good as those made by liquid phase epitaxial growth. Maximum external quantum efficiency, standard graded index fibre input power and cutoff frequency at a forward current of 100 mA are 3.9%, 163 μW and 73 MHz. respectively.


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