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Polarisation-dependent gain-current relationship in InGaAs/InGaAlAs/InAlAs SCH-MQW laser diodes

Polarisation-dependent gain-current relationship in InGaAs/InGaAlAs/InAlAs SCH-MQW laser diodes

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The polarisation-dependent gain spectra were measured at −190 C for InGaAs InGaAlAs InAlAs SCH-MQW laser diodes. The peak gain for TE polarisation was much larger (>750 cm−1) than that for TM polarisation, while the peak gain difference for InGaAs InAlAs DH lasers was as small as 15 cm−1. This peak gain difference for SCH-MQW lasers is surprisingly larger than that for GaAs GaAlAs MQW lasers. This difference was explained by the polarisation-related selection rules for optical transition.

Inspec keywords: gallium arsenide; indium compounds; semiconductor junction lasers; polarisation; aluminium compounds; III-V semiconductors

Other keywords: TM polarisation; separate confinement heterostructure; peak gain difference; optical transition; polarisation-related selection rules; multi quantum well; III-V semiconductors; TE polarisation; InGaAs/InGaAlAs/InAlAs; laser diodes; polarisation-dependent gain spectra

Subjects: Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems; II-VI and III-V semiconductors

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