High-speed GaInAs Schottky photodetector

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High-speed GaInAs Schottky photodetector

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© The Institution of Electrical Engineers
Published

A Schottky contact photodiode on p-type GaInAs for application at λ=1.3–1.6 μm has been fabricated and tested. The coaxial type device shows an external quantum efficiency of 19% at λ=1.27 μm, and rise and fall times of less than 15 ps.

Inspec keywords: indium compounds; photodiodes; Schottky-barrier diodes; III-V semiconductors; gallium arsenide

Other keywords: fall times; GaInAs Schottky photodetector; external quantum efficiency; III-V semiconductors; rise times; Schottky contact photodiode; 1.3 microns to 1.6 microns; coaxial type device

Subjects: Junction and barrier diodes; II-VI and III-V semiconductors; Photoelectric devices

References

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      • S.Y. Wang , D.M. Bloom . 100 GHz bandwidth planar GaAs Schottky photodiode. Electron. Lett. , 554 - 555
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      • J. Selders , N. Emeis , H. Beneking . Schottky barriers on P-type GaInAs. IEEE Trans.
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      • M. Wiesenfeld , A.R. Chraplyvy , J. Stone , C.A. Barrens . Measurement of very-high-speed photodetectors with picosecond InGaAsP film lasers. Electron. Lett. , 22 - 24
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      • Takeda, Y., Hamageshi, H., Kondo, M., Fujita, S., Sasaki, S.: `Evaluation of ', Third record of III-V alloy semiconductor physics and electronics seminar, 1984, p. 157–168.
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      • W. Roth , H. Schumacher , J. Kluge , H.J. Geelen , H. Beneking . The DSI-diode—a fast large area optoelectronic detector. IEEE Trans.
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