© The Institution of Electrical Engineers
A Schottky contact photodiode on p-type GaInAs for application at λ=1.3–1.6 μm has been fabricated and tested. The coaxial type device shows an external quantum efficiency of 19% at λ=1.27 μm, and rise and fall times of less than 15 ps.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850127
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content/journals/10.1049/el_19850127
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