We demonstrate for the first time a shallow p+−n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow p+−n junction in GaInAs.
Inspec keywords: p-n homojunctions; ion implantation; III-V semiconductors; carrier density; mercury (metal); indium compounds; gallium arsenide
Other keywords:
Subjects: Doping and implantation of impurities; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor junctions; II-VI and III-V semiconductors; Semiconductor doping
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