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Theoretical analysis of the nonlinear behaviour of a loss-free distributed amplifier

Theoretical analysis of the nonlinear behaviour of a loss-free distributed amplifier

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© The Institution of Electrical Engineers
Published

In the letter the theoretical analysis of the behaviour of a nonlinear n-stage (n-MESFET) loss-free distributed amplifier is presented together with the results of this analysis. The transconductance of the MESFET was considered as the nonlinear element, while the other elements are assumed to be linear.

Inspec keywords: Schottky gate field effect transistors; wideband amplifiers; nonlinear network analysis

Other keywords: transconductance; nonlinear behaviour; n-MESFET lossfree distributed amplifier; nonlinear element; equivalent circuit

Subjects: Nonlinear network analysis and design; Amplifiers

References

    1. 1)
      • I. Richer , R.D. Middlebrook . Power-law nature of field-effect transistor experimental characteristics. Proc. IEEE
    2. 2)
      • Nazoa-Ruiz, N., Aitchison, C.S.: `The gain and noise performance of lossy distributed amplifiers using MESFETs', Proc. 1984 EMC, September 1984, Liege, p. 398–403.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850075
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