© The Institution of Electrical Engineers
Experimental data are analysed in order to determine the electric field at which the synchronism occurs in a semiconductor piezoelectric amplifier structure. In the interaction region the electron mobility of a sample of high resistivity silicon is measured to be in the order of 1268 cm2/Vs. The carrier concentration is deduced as a result of the comparison between the experimental and theoretical results.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850025
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