References

• 1. 1)
     • A. Fortini , D. Diguet , J. Lugano . Analysis of polar optical scattering of electrons in GaAs. J. Appl. Phys. , 3121 - 3127
  2. 2)
     • V.A. Tyagi , A.M. Evstigneev , A.N. Krasikov , A.F. Andreeva , V.Y. Malakhov . Optical properties of indium nitride films. Sov. Phys. Semicond. , 1257 - 1259
  3. 3)
     • J.W. Trainor , K. Rose . Some properties of InN films prepared by reactive evaporation. J. Electron. Mat. , 821 - 828
  4. 4)
     • R. Resta , L. Resca . Ionized impurity scattering in semiconductors. Phys. Rev. B. , 3254 - 3257
  5. 5)
     • H. Brooks . Scattering by ionized impurities in semiconductors. Phys. Rev. , 679 - 885
  6. 6)
     • H.J. Hovel , J.J. Cuomo . Electrical and optical properties of r.f. sputtered GaN and InN. Appl. Phys. Lett. , 71 - 73
  7. 7)
     • T.L. Tansley , C.P. Foley , J.S. Blakemore . (1984) , Polycrystalline indium nitride films.
  8. 8)
     • J.A. Thornton . Influence of apparatus geometry and deposition conditions on the structure and topology of thick sputtered coatings. J. Vac. Sci. Technol. , 666 - 670
  9. 9)
     • L.R. Weisburg . Anomalous mobility effects in some semiconductors and insulators. J. Appl. Phys. , 1817 - 1821
  10. 10)
      • P.K. Bhattacharya , J.W. Ku , S.J.T. Owen , G.H. Olsen , Sun-Hai Chiao . LPE and VPE In1−xGaxAsyP1−y/InP: transport properties, defects and device considerations. IEEE J. Quantum Electron. , 150 - 161
  11. 11)
      • B.R. Natarajan , A.H. Eltoukhy , J.E. Greene , T.L. Barr . Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2discharges. Thin Solid Films , 201 - 216
  12. 12)
      • C.P. Foley , T.L. Tansley . Morphology and structure of indium nitride films. App. Surf. Sci.
  13. 13)
      • E. Conwell , V.F. Weisskopf . Theory of impurity scattering in semiconductors. Phys. Rev. B. , 388 - 401
  14. 14)
      • N. Puychevrier , M. Menoret . Synthesis of III-V semiconductor nitrides by reactive cathodic sputtering. Thin Solid Films , 141 - 145