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Effects of doping levels at source and drain regions on the performance of a-Si FET

Effects of doping levels at source and drain regions on the performance of a-Si FET

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Published

The transfer characteristics of a-Si FETs are remarkably improved by adopting the phosphorus doped n+-layer at the source and drain contacts. Excess doping of phosphorus, however, causes degradation in the transfer characteristics after heat treatment. The optimum doping level is obtained by depositing the n+-layer at 1 to 5×10−3 molar ratios of PH3/SiH4.

Inspec keywords: amorphous semiconductors; silicon; field effect transistors; semiconductor doping; elemental semiconductors; doping profiles

Other keywords: amorphous Si; doping levels; drain regions; performance study; heat treatment; transfer characteristics; P doped n+ layer; elemental semiconductors; Si:H,P; source region; FET

Subjects: Other field effect devices; Semiconductor doping

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