High-power and high-efficiency InP Gunn diodes which were made from wafers grown by LP-MOCVD have been developed in the millimetre-wave range. Average power levels in excess of 50 mW were obtained at 94 GHz with an efficiency of 3%, while an optimised structure operating at 75 mW has been obtained with an efficiency of 2.4%.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19840725
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content/journals/10.1049/el_19840725
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