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Planar InGaAs/InP PINFET fabricated by Be ion implantation

Planar InGaAs/InP PINFET fabricated by Be ion implantation

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Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 μm.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19840644
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