Planar InGaAs/InP PINFET fabricated by Be ion implantation

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Planar InGaAs/InP PINFET fabricated by Be ion implantation

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© The Institution of Electrical Engineers
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Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 μm.

Inspec keywords: gallium arsenide; field effect transistors; integrated optoelectronics; ion implantation; indium compounds; phototransistors; III-V semiconductors

Other keywords: static optical response; III-V semiconductors; p-type regions; total effective quantum efficiency; Be ion implantation; PINFETs; InGaAs; 1.55 microns wavelength

Subjects: II-VI and III-V semiconductors; Other field effect devices; Semiconductor doping; Integrated optoelectronics; Photoelectric devices

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