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Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser

Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser

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An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).

Inspec keywords: semiconductor junction lasers; field effect transistors; gallium arsenide; aluminium compounds; III-V semiconductors

Other keywords: graded-index-waveguide separate-confinement-heterostructure; semiconductor junction lasers; field-effect-transistor drivers; input gate voltage; output light power; AlGaAs/GaAs; laser threshold current; semi-insulating GaAs substrate; single-quantum-well; sensitivity

Subjects: Lasing action in semiconductors; Semiconductor lasers; II-VI and III-V semiconductors; Design of specific laser systems

References

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      • T. Sanada , S. Yamakoshi , O. Wada , T. Fujii , T. Sakurai , M. Sasaki . Monolithic integration of an AlGaAs/GaAs multi-quantum well laser and GaAs metal-semiconductor field effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy. Appl. Phys. Lett.
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      • Carney, J.K., Helix, M.J., Kolbas, R.M.: `Gigabit optoelectronic transmitters', Technical Digest, GaAs IC Symposium, October 1983, Phoenix, p. 48.
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      • N. Bar-Chaim , S. Margalit , A. Yariv , I. Ury . GaAs integrated optoelectronics. IEEE Trans.
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      • W.T. Tsang . Extremely low threshold (AlGa)As graded-index waveguide separate confinement heterostructure lasers grown by molecular beam epitaxy. Appl. Phys. Lett.
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      • H. Matsueda , S. Sakaki , M. Nakamura . GaAs Optoelectronic integrated light sources. IEEE J. Lightwave Technol.
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      • Kim, M.E., Hong, C.S., Kasemset, D., Milano, R.A.: `GaAlAs/GaAs integrated optoelectronic transmitter using selective MOCVD epitaxy and planar ion implantation', Technical Digest, GaAs IC Symposium, October 1983, Phoenix, p. 44.
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      • T. Fujii , S. Yamakoshi , K. Nanbu , O. Wada , S. Hiyamizu . Very low threshold current GaAs-AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications. J. Vac. Sci. Technol. B
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