MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

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MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

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GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs0.5P0.5 super-lattice and GaAs0.5P0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.

Inspec keywords: semiconductor growth; chemical vapour deposition; semiconductor superlattices; gallium arsenide; luminescence of inorganic solids; semiconductor thin films; photoluminescence; III-V semiconductors

Other keywords: intermediate layers; GaAs; strained superlattice layers; MOCVD growth; GaAs0.5P0.5/GaAs superlattice; Si substrate; GaP/GaAs0.5P0.5 superlattice; AlGaP; III-V semiconductor; photoluminescence intensity

Subjects: II-VI and III-V semiconductors; Photoluminescence in tetrahedrally bonded nonmetals; Thin film growth, structure, and epitaxy; Optical properties of nonmetallic thin films; Chemical vapour deposition; Chemical vapour deposition

References

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