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Two-dimensional profiles of impurity diffusion in semiconductors

Two-dimensional profiles of impurity diffusion in semiconductors

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© The Institution of Electrical Engineers
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The letter shows how two-dimensional impurity profiles in semiconductors can be calculated by applying a simple and efficient finite difference algorithm. The diffusion coefficient employed in the model depends on the impurity concentrations in accordance with the recent theory of nonlinear diffusion in semiconductors. The limit of validity of the more simple linear diffusion model is also determined.

Inspec keywords: semiconductors; difference equations; doping profiles; diffusion in solids

Other keywords: semiconductors; linear diffusion model; nonlinear diffusion; diffusion coefficient; two-dimensional impurity profiles; impurity diffusion; finite difference algorithm

Subjects: Diffusion, migration, and displacement of impurities in solids; Semiconductor doping; Semiconductor theory, materials and properties; Impurity concentration, distribution, and gradients

References

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