Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Effect of additional heavy metal layer on ZnO-Si monolithic SAW devices

Effect of additional heavy metal layer on ZnO-Si monolithic SAW devices

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Enhancement of electromechanical coupling has been shown in numerical calculations with an additional massive and conducting layer, such as Au, which makes the velocity of SAW slow between a ZnO thin film and an Si substrate. It is also shown that the electromechanical coupling factor can be increased without deterioration of the temperature coefficient of phase velocity.

Inspec keywords: zinc compounds; surface acoustic wave devices; silicon; electromechanical effects

Other keywords: electromechanical coupling; numerical calculations; SAW velocity; Si substrate; heavy metal layer; ZnO thin film; Au; ZnO-Si monolithic SAW devices; temperature coefficient of phase velocity

Subjects: Acoustic wave devices

References

    1. 1)
      • G.W. Farnell . Symmetry considerations for elastic layer modes propagation in anisotropic piezoelectric crystals. IEEE Trans. , 229 - 238
    2. 2)
      • S. Urabe . Voltage controlled monolithic SAW phase shifter and its application to frequency variable oscillator. IEEE Trans. , 255 - 261
    3. 3)
      • S.J. Martine , S.S. Schwartz , R.L. Gunshor , R.F. Pierret . Surface acoustic wave resonators on a ZnO-on-Si layered medium. J. Appl. Phys. , 561 - 562
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19840617
Loading

Related content

content/journals/10.1049/el_19840617
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address