High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

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High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

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© The Institution of Electrical Engineers
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A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

Inspec keywords: semiconductor junction lasers; distributed feedback lasers; gallium arsenide; III-V semiconductors; indium compounds

Other keywords: laser diode; p-type InP substrate; distributed feedback laser; AR coating; 1.3 microns wavelength; buried heterostructure; semiconductor junction lasers; high-power single longitudinal mode; InP/InGaAsP; as-cleaved facets

Subjects: Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers

References

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      • H. Okuda , Y. Hirayama , J. Kinoshita , H. Furuyama , Y. Uematsu . High-quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratings. Electron. Lett. , 941 - 943
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