Processing of unipolar diodes with electron beams

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Processing of unipolar diodes with electron beams

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© The Institution of Electrical Engineers
Published

Low-energy ion implantation and multiple-scan electron-beam annealing have been used to produce bulk unipolar camel diodes and Schottky diodes with a range of barrier heights. Optimisation of results required precise doping and diffusion control.

Inspec keywords: Schottky-barrier diodes; electron beam applications; annealing; ion implantation; semiconductor diodes

Other keywords: unipolar diodes; electron-beam annealing; Schottky diodes; barrier heights; doping control; low energy ion implantation; diffusion control; camel diodes

Subjects: Junction and barrier diodes; Semiconductor doping

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