Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs

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Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs

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© The Institution of Electrical Engineers
Published

The fabrication of self-aligned gate by ion implantation modulation doped (Al,Ga)As/GaAs field effect transistors (MODFETs) utilising a novel multilayer structure capable of withstanding the high-temperature furnace anneals required for Si implant activation is reported. Typical measured extrinsic transconductances of 175 mS/mm at 300 K and 290 mS/mm at 77 K were achieved on 1.1 μm-gate-length devices. Values of the two-dimensional electron gas saturation velocity of 1.9×107 cm/s at 300 K and 2.7×107 cm/s at 77 K were obtained from an analysis of the FET drain current/voltage characteristics using the charge-control model.

Inspec keywords: gallium arsenide; ion implantation; field effect transistors; aluminium compounds; III-V semiconductors

Other keywords: Si implant activation; high-temperature furnace anneals; III-V semiconductor; two-dimensional electron gas saturation velocity; ion implantation; MODFETs; extrinsic transconductances; selfaligned gate FET; 1.1 micron gate length devices; multilayer modulation doped (Al, Ga)As/GaAs structures; drain current/voltage characteristics; charge-control model

Subjects: Semiconductor doping; Other field effect devices

References

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