© The Institution of Electrical Engineers
The fabrication of self-aligned gate by ion implantation modulation doped (Al,Ga)As/GaAs field effect transistors (MODFETs) utilising a novel multilayer structure capable of withstanding the high-temperature furnace anneals required for Si implant activation is reported. Typical measured extrinsic transconductances of 175 mS/mm at 300 K and 290 mS/mm at 77 K were achieved on 1.1 μm-gate-length devices. Values of the two-dimensional electron gas saturation velocity of 1.9×107 cm/s at 300 K and 2.7×107 cm/s at 77 K were obtained from an analysis of the FET drain current/voltage characteristics using the charge-control model.
References
-
-
1)
-
Lee, C.P., Miller, D.L., Hou, D., Anderson, R.J.: `Ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors', Proc. 41st Dev. Res. Conf., June 1983, p. IIA-7.
-
2)
-
K. Lee ,
M.S. Shur ,
T.J. Drummond ,
H. Morkoç
.
Current-voltage and capacitance-voltage characteristics of modulation doped field effect transistors.
IEEE Trans.
-
3)
-
R.A. Kuhl ,
M.D. Feuer ,
R.H. Hendel ,
J.C.M. Hwang ,
V.G. Kera-Midas ,
C.L. Allyn ,
R. Dingle
.
Selectively doped heterostructures frequency dividers.
IEEE Electron Device Lett.
,
377 -
379
-
4)
-
Cirillo, N.C., Abrokwah, J.K., Shur, M.S.: `S self-aligned gate process for ICs based on modulation doped (Al, Ga)As/GaAs FETs', Proc. 42nd Dev. Res. Conf., June 1984, p. IIA-4.
-
5)
-
Lee, H., Wicks, G., Eastman, L.F.: `High temperature annealing of modulation doped GaAs/AlGaAs heterostructures for FET applications', Proc. of IEEE/Cornell Conf. on high-speed semiconductor devices and circuits, August 1984, p. 204–208.
-
6)
-
T. Mimura ,
S. Hiyamizu ,
T. Fiyi ,
K. Nanbu
.
A new field-effect transistor with selectively-doped GaAs/n-AlxGa1 − xAs heterojunctions.
Jpn. J. Appl. Phys.
,
L225 -
L227
-
7)
-
K. Lee ,
M.S. Shur ,
T.J. Drummond ,
H. Morkoç
.
Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FETs and MODFET characterisation.
IEEE Trans.
,
29 -
35
-
8)
-
T. Ishikawa ,
S. Hyamizu ,
T. Mimura ,
J. Saito ,
H. Hashimoto
.
The effect of annealing on the electrical properties of selectively doped GaAs/n-AlGaAs heterojunction structures grown by MBE.
Jpn. J. Appl. Phys.
,
L814 -
L816
-
9)
-
A.J. Valois ,
G.Y. Robinson ,
K. Lee ,
M.S. Shur
.
Temperature dependence of the I-V characteristics of modulation-doped FETs.
J. Vac. Sci. Technol.
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