GaAs/LB film MISS switching device

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GaAs/LB film MISS switching device

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© The Institution of Electrical Engineers
Published

MISS switches incorporating Langmuir-Blodgett films as insulating layers are reported for the first time. Devices fabricated using n on p+ GaAs and including a 9 nm-thick ω-tricosenoic acid insulating layer are shown to possess good characteristics. The results indicate that switching occurs due to a ‘punch-through’ mechanism.

Inspec keywords: III-V semiconductors; Langmuir-Blodgett films; semiconductor switches; metal-insulator-semiconductor devices; gallium arsenide

Other keywords: semiconductor switch; Langmuir-Blodgett films; GaAs; ω-tricosenoic acid; insulating layers; MISS switching device; punchthrough mechanism

Subjects: Other field effect devices

References

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