Semiconductor laser lineshape and parameter determination from fringe visibility measurements

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Semiconductor laser lineshape and parameter determination from fringe visibility measurements

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© The Institution of Electrical Engineers
Published

The field autocorrelation function of single-mode 1.3 μm InGaAsP lasers has been measured using a Michelson interferometer. Comparison with theory for semiconductor laser line broadening yields the relaxation oscillation frequency, its damping rate and the linewidth broadening factor. A comparison with other techniques for lineshape measurement is presented.

Inspec keywords: semiconductor junction lasers; light interferometry; indium compounds; gallium arsenide; III-V semiconductors; spectral line breadth; gallium compounds

Other keywords: Michelson interferometer; linewidth broadening factor; damping rate; fringe visibility; single mode laser; relaxation oscillation frequency; InGaAsP lasers; semiconductor laser line broadening; field autocorrelation function

Subjects: Laser beam characteristics and interactions; Semiconductor lasers; Laser beam interactions and properties; Lasing action in semiconductors

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      • C.H. Henry . Theory of phase noise and power spectrum of a single mode injection laser. IEEE J. Quantum Electron. , 1391 - 1397
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      • B. Daino , P. Spano , M. Tamburrini , S. Piazzolla . Phase noise and spectral line shape in semiconductor lasers. IEEE J. Quantum Electron. , 266 - 270
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