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Expected performances of GaAlAs/GaAs double-velocity heterojunction impatt diodes

Expected performances of GaAlAs/GaAs double-velocity heterojunction impatt diodes

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A novel heterojunction avalanche transit-time diode with low-high-low doping profile is proposed. The avalanche ionisation occurs only in a low doping GaAs zone and the drift zone incorporates high (GaAlAs) and low (GaAs) doping materials having different saturated drift velocities. Potential performances of the structure are analysed in the X-band and in the millimetre-wave range using computer simulations. Theoretical predictions show an important improvement of the conversion efficiency in comparison with GaAs low-high-low impatt diodes.

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