Glass reinforced GaAs beam lead Schottky diode with airbridge for millimetre wavelengths

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Glass reinforced GaAs beam lead Schottky diode with airbridge for millimetre wavelengths

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© The Institution of Electrical Engineers
Published

We describe the fabrication and measurement of a glass reinforced beam lead Schottky diode with an airbridge for use at millimetre wavelengths. We report an extremely low single sideband (SSB) noise figure for these diodes of 7.9 dB at 94 GHz, including a 1.5 dH IF (30 MHz) contribution.

Inspec keywords: solid-state microwave devices; electron device noise; beam-lead devices; Schottky-barrier diodes; III-V semiconductors; gallium arsenide

Other keywords: frequency 94 GHz; III-V semiconductors; millimetre wavelengths; fabrication; measurement; airbridge; GaAs beam lead Schottky diode; low single; low SSB noise figure; IF 30 MHz; EHF; MM-waves; glass reinforced beam lead Schottky diode

Subjects: II-VI and III-V semiconductors; Junction and barrier diodes; Solid-state microwave circuits and devices

References

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      • J.A. Calviello , J.L. Wallace , P.R. Bie . High performance beam lead mixer diodes for millimetre and submillimetre applications. Electron. Lett. , 509 - 510
    2. 2)
      • M.J. Sisson . The development of millimetre wave mixer diodes. Radio & Electron. Eng. , 534 - 542
    3. 3)
      • A.G. Cardiasmenos . New diodes cut the cost of mixer technology. Microwaves , 78 - 88
    4. 4)
      • A.A. Immorlica , E.J. Wood . A novel technology for fabrication of beam leaded GaAs Schottky barrier mixer diodes. IEEE Trans. , 710 - 713
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