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Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Å compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.
Inspec keywords: gallium arsenide; III-V semiconductors; bipolar transistors; molecular beam epitaxial growth; aluminium compounds
Other keywords:
Subjects: II-VI and III-V semiconductors; Epitaxial growth; Bipolar transistors; Semiconductor doping