Collector/emitter offset voltage in double-heterojunction bipolar transistors

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Collector/emitter offset voltage in double-heterojunction bipolar transistors

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© The Institution of Electrical Engineers
Published

Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Å compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.

Inspec keywords: gallium arsenide; III-V semiconductors; bipolar transistors; molecular beam epitaxial growth; aluminium compounds

Other keywords: digital switching circuits; 130 angstroms compositional grading; MBE; GaAlAs/GaAs DHBT; collector/emitter offset voltage; DHBT; emitter base junction; insufficient grading; double-heterojunction bipolar transistors; base/collector heterojunction; III-V semiconductors; base/collector junctions

Subjects: II-VI and III-V semiconductors; Epitaxial growth; Bipolar transistors; Semiconductor doping

References

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      • J.R. Hayes , F. Capasso , R.J. Malik , A.C. Gossard , W. Wiegmann . Optimum emitter grading for heterojunction bipolar transistors. Appl. Phys. Lett. , 949 - 951
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