Generation of 4 ps light pulses from directly modulated V-groove lasers

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Generation of 4 ps light pulses from directly modulated V-groove lasers

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4 ps light pulses at repetition rates up to 10 MHz with an output power of some milliwatts are generated at 840 nm by directly modulating commercial GaAlAs V-groove lasers by specially designed avalanche generators. The pulses are measured using an ultrafast streak camera and present the fastest light pulses obtained until now by direct modulation of a semiconductor laser. The avalanche generators produce pulses of 125–200 ps FWHM with voltages up to 25 and 38 V, respectively.

Inspec keywords: aluminium compounds; gallium arsenide; semiconductor junction lasers; optical modulation; III-V semiconductors

Other keywords: pulse length 4 ps; ultrafast streak camera; directly modulated V-groove lasers; 4 ps light pulses; avalanche generators; PRR; light pulse generation; wavelength 840 nm; output power; pulse repetition rate 10 MHz; semiconductor laser; GaAlAs V-groove lasers

Subjects: Design of specific laser systems; Semiconductor lasers; Laser beam interactions and properties; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; II-VI and III-V semiconductors

References

    1. 1)
      • E. Schöll , D. Bimberg , H. Schumacher , P.T. Landsberg . Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high injection currents. IEEE J. Quantum Electron.
    2. 2)
      • R.A. Elliot , D.X. Huang , R.K. de Freez , J.M. Hunt , P.G. Rickman . Picosecond optical pulse generation by impulse train current modulation of a semiconductor laser. Appl. Phys. Lett. , 1012 - 1014
    3. 3)
      • H.J. Klein , D. Bimberg , H. Beneking , J. Kuhl , E.O. Goebel . High peak power picosecond light pulses from a directly modulated semiconductor laser. Appl. Phys. Lett. , 394 - 396
    4. 4)
      • Y. Tsuchiya , M. Miwa , M. Koishi . Direct observation of picosecond light pulses from a pulse-current pumped semiconductor laser. J. Appl. Phys. , 6671 - 6672
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Generation of 4 ps light pulses from directly modulated V-groove lasers