Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

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Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

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© The Institution of Electrical Engineers
Published

The operation of the recently disclosed heterojunction avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions (HI-LO SAM APD) is demonstrated. This new structure which features a doping spike in the wide gap layer offers several advantages over conventional SAM APDs (lower dark current and excess noise factor, greater gain stability). Low dark currents (≃1 nA), low voltage operation (−26 V) and gains as high as 50 at 1.60 μm are demonstrated in an Al0.48In0.52As/Ga0 47In0 53As prototype grown by molecular beam epitaxy.

Inspec keywords: semiconductor growth; molecular beam epitaxial growth; III-V semiconductors; avalanche photodiodes; aluminium compounds; gallium arsenide; indium compounds

Other keywords: semiconductor; molecular beam epitaxy; high-low electric field profile; multiplication regions; gain stability; low voltage operation; avalanche photodiode; Al0.48In0.52As/Ga0.47In0.53As structure; absorption regions; wide gap layer; wavelength 1.3 to 1.6 microns; dark current; doping spike; excess noise factor

Subjects: Epitaxial growth; Photoelectric devices

References

    1. 1)
      • F. Capasso , K. Alavi , A.Y. Cho , P.W. Foy , C.G. Bethea . New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy. Appl. Phys. Lett. , 1040 - 1042
    2. 2)
      • G.E. Stillman , L.W. Cook , G.E. Bulman , N. Tabatabaie , R. Chin , P.D. Dapkus . Long wavelength (1.3 to 1.6 μm) detectors for fiber optical communications. IEEE Trans. , 1355 - 1371
    3. 3)
      • J.C. Campbell , A.G. Dentai , W.S. Holden , B.L. Kasper . High-performance avalanche photodiode with separate absorption, grading and multiplication regions. Electron. Lett. , 818 - 820
    4. 4)
      • Capasso, F., Alavi, K., Cho, A.Y., Foy, P.W., Bethea, C.G.: `Long wavelength, wide spectral response (0.8–1.8 μm) Al', Paper presented at the International Electron Device Meeting, IEDM Technical Digest, 5–7 December 1983, , p. 468.
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