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Effective recombination velocity of polysilicon contacts for bipolar transistors

Effective recombination velocity of polysilicon contacts for bipolar transistors

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© The Institution of Electrical Engineers
Published

The effective surface recombination velocity is determined analytically for a doped polysilicon contact to the emitter of a bipolar transistor in the presence of a thin interfacial oxide layer. Results are presented for various doping levels, oxide thicknesses and barrier heights. The analysis considers both tunnelling and thermionic emission through the interface.

Inspec keywords: electron-hole recombination; bipolar transistors; electrical contacts

Other keywords: polycrystalline Si; surface recombination velocity; tunnelling; barrier heights; doped polysilicon contact; bipolar transistors; thermionic emission; doping levels; interfacial oxide layer

Subjects: Bipolar transistors

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      • Duffill, J.F.: `Investigation of interfacial oxide thickness between silicon and polysilicon', ESSDERC 82, 12th European Solid State Device Research Conference, , p. 197.
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