GaAs-loaded metal waveguide components for high-speed low-VSWR optoelectronic millimetre-wave switching
A new approach to fast optoelectronic microwave and millimetre-wave switching is reported. The concept is based on a metal waveguide section containing a thin slab of semi-insulating GaAs. Modulation or switching is achieved by wave attenuation across a laser-induced photoconductive plasma wedge generated within the GaAs slab via edge excitation. First experimental results in the 30–35 GHz range are presented.