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Monolithically integrated Gunn oscillator at 35 GHz

Monolithically integrated Gunn oscillator at 35 GHz

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© The Institution of Electrical Engineers
Published

A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.

Inspec keywords: monolithic integrated circuits; gallium arsenide; Gunn oscillators; integrated circuit technology; III-V semiconductors; microwave integrated circuits

Other keywords: planar monolithically integrated Gunn oscillator; local oscillator; GaAs substrate; frequency 35 GHz; Ka-band; EHF; mm-waves; integrated millimetre-wave receivers; output power; MMIC; quasioptical coupling; efficiency

Subjects: Solid-state microwave circuits and devices; II-VI and III-V semiconductors; Semiconductor integrated circuits; Oscillators; Bulk effect devices

References

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      • Anderson, G.F., Chang, C.C., Lynch, P.G., Matreci, R.J., David, F.K., Roberts, G.I.: `GaAs beam lead antiparallel diodes for mm-wave subharmonic mixers', Proceedings of the International Electron Devices Metting, December 1981.
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