High-speed and low-power GaAs DCFL divider

Access Full Text

High-speed and low-power GaAs DCFL divider

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Published

High-speed and low-power divide-by-252 or -256 circuit have been fabricated by using high-transconductance GaAs enhancement-mode MESFETs. This variable-modulus divider is able to operate up to a clock frequency of 3.7 GHz. The total power dissipation at the maximum frequency is 180 mW, and it is as low as 42 mW and 30 mW at 3 GHz and 2.5 GHz, respectively.

Inspec keywords: frequency dividers; III-V semiconductors; integrated logic circuits; field effect integrated circuits; gallium arsenide; Schottky gate field effect transistors

Other keywords: enhancement-mode MESFET; 3 GHz; III-V semiconductors; frequency dividers; divide-by-256 circuit; high-speed low-power design; 2.5 GHz; logic IC; variable-modulus divider; 3.7 GHz clock frequency; DCFL divider; direct coupled FET logic; GaAs; divide-by-252 circuit

Subjects: Other analogue circuits; Logic circuits

References

    1. 1)
      • E.R. Walton , E.K. Shen , F.S. Lee , R. Zucca , Y.D. Shen , B.M. Welch , R. Dikshit . High-speed GaAs DCFL divider circuit. IEEE Trans.
    2. 2)
      • T. Onuma , A. Tamura , T. Uenoyama , H. Tsujii , K. Nishii , H. Yagita . High-transconductance enhancement-mode GaAs MESFET fabrication technology. IEEE Electron Device Lett.
    3. 3)
      • T. Mizutani , N. Kato , K. Osafune , M. Ohmori . Gigabit logic operation with enhancement-mode GaAs MESFET IC's. IEEE Trans.
    4. 4)
      • Mitsui, Y., Nishitani, K., Ishihara, O., Nakatani, M.: `Low-power GaAs 1/256 prescaler MSI', 1982 GaAs IC Symposium, p. 115.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19840381
Loading

Related content

content/journals/10.1049/el_19840381
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading