Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation
Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation
- Author(s): K. Das ; S. McClelland ; J.B. Butcher
- DOI: 10.1049/el:19840365
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- Author(s): K. Das 1 ; S. McClelland 1 ; J.B. Butcher 1
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View affiliations
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Affiliations:
1: Microelectronics Centre, Middlesex Polytechnic, London, UK
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Affiliations:
1: Microelectronics Centre, Middlesex Polytechnic, London, UK
- Source:
Volume 20, Issue 13,
21 June 1984,
p.
526 – 527
DOI: 10.1049/el:19840365 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
An improvement of the crystalline quality of the surface layer in buried implanted oxide structures in silicon has been achieved by silicon in implantation and subsequent 570°C anneal treatment.
Inspec keywords: semiconductor technology; elemental semiconductors; silicon; ion implantation
Other keywords:
Subjects: Elemental semiconductors; Semiconductor doping
References
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