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Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.
Inspec keywords: semiconductor-insulator boundaries; electronic conduction in insulating thin films; carrier mobility; Hall effect; ion implantation
Other keywords:
Subjects: Metal-insulator-semiconductor structures; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Electrical properties of insulators (thin films, low-dimensional and nanoscale structures); Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical properties of metal-insulator-semiconductor structures