Monolithic integration of low-threshold-current 1.3 μm GaInAsP/InP DFB lasers

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Monolithic integration of low-threshold-current 1.3 μm GaInAsP/InP DFB lasers

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© The Institution of Electrical Engineers
Published

Two 1.3 μm GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 Å separation in wavelength between the two lasers was produced by a 2 Å difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths.

Inspec keywords: multiplexing equipment; gallium arsenide; distributed feedback lasers; III-V semiconductors; integrated optics; indium compounds; optical communication equipment; semiconductor junction lasers

Other keywords: optical communication equipment; GaInAsP/InP DFB lasers; III-V semiconductors; integrated optics; semiconductor lasers; thermal interaction; low threshold currents; 68°C; 1.3 micron; grating period difference; continuous operation; 12 angstroms wavelength separation; wavelength multiplexing; WDM

Subjects: Semiconductor lasers; Integrated optics; Optical communication; Optical communication devices, equipment and systems; Lasing action in semiconductors; Design of specific laser systems; Integrated optics

References

    1. 1)
      • J. Kinoshita , H. Okuda , Y. Uematsu . Preserving InP surface corrugations for 1.3 μm GaInAsP/InP DFB lasers from thermal deformation during LPE process. Electron. Lett. , 215 - 216
    2. 2)
      • H. Matsueda , S. Sasaki , M. Nakamura . GaAs optoelectronic integrated light sources. J. Lightwave Technol. , 261 - 269
    3. 3)
      • H. Okuda , J. Kinoshita , Y. Uematsu . (1983) Monolithically integrated GaInAsP/InP distributed feedback lasers.
    4. 4)
      • Y. Suzuki , Y. Noguchi , K. Takahei , H. Nagai , G. Iwane . 1.5 μm region BH laser array. Jpn. J. Appl. Phys. , L229 - L232
    5. 5)
      • H. Okuda , Y. Hirayama , J. Kinoshita , H. Furuyama , Y. Uematsu . High quality 1.3 μm GaInAsP/InP BH-DFB lasers with first-order gratings. Electron. Lett. , 941 - 943
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19840324
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