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X-band paraphase amplifier

X-band paraphase amplifier

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© The Institution of Electrical Engineers
Published

A design method for paraphase amplifiers is described. The feasibility of balun action with gain is demonstrated by means of a paraphase amplifier over the range 9–11 GHz with a gain difference between the two ways of less than 0.9 dB and deviation from antiphase of less than ±3°.

Inspec keywords: S-parameters; solid-state microwave circuits; microwave amplifiers; differential amplifiers; field effect transistor circuits

Other keywords: design method; frequency range 9 to 11 GHz; balun action with gain; phase difference 180°; deviation from antiphase; differential amplifiers; X-band paraphase amplifier; gain difference; microwave amplifiers; SHF

Subjects: Solid-state microwave circuits and devices; General circuit analysis and synthesis methods; Amplifiers

References

    1. 1)
      • V. Sokolov , R.E. Williams . Development of GaAs monolithic power amplifiers in X-band. IEEE Trans. , 1164 - 1171
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