Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

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Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

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© The Institution of Electrical Engineers
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A low ohmic contact resistance metallurgy and associated alloy cycles have been developed for applications to Al0.48In0.52As/Ga0.47In0.53As MODFETs (HEMTs). The metallurgy involves sequentially evaporated Ni/Ge/Au/Ag/Au layers followed by transient thermal alloy cycles. This resulted in low transfer resistances ∼0.06 Ωmm to the underlying GalnAs layer for alloying temperatures to ∼480°C.

Inspec keywords: ternary semiconductors; III-V semiconductors; aluminium compounds; ohmic contacts; germanium alloys; metallisation; silver alloys; semiconductor technology; indium compounds; gallium arsenide; nickel alloys; Schottky gate field effect transistors; gold alloys

Other keywords: low ohmic contact resistance metallurgy; alloy cycles; HEMTs; Ni-Ge-Au-Ag alloy; underlying GaInAs layer; low resistance ohmic contacts; alloying temperatures; MODFETs; metallisation; ternary compound semiconductors; evaporated Ni/Ge/Au/Ag/Au layers; transient thermal alloy cycles; MESFET

Subjects: Contact resistance, contact potential, and work functions; Metallisation and interconnection technology; Semiconductor-metal interfaces; Electrical conductivity of II-VI and III-V semiconductors; Electrical properties of metal-nonmetal contacts; II-VI and III-V semiconductors; Lithography (semiconductor technology); Other field effect devices

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