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Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
References
-
-
1)
-
B.D. Choe ,
Y.K. Yeo ,
Y.S. Park
.
Distribution of electrically active Mg implants in GaAs.
J. Appl. Phys.
,
4742 -
4746
-
2)
-
K. Nishiyama ,
M. Arai ,
N. Watanabe
.
Radiation annealing of boron implanted silicon with a halogen lamp.
Jpn. J. Appl. Phys.
,
L563 -
L566
-
3)
-
Davies, D.E., McNally, P.J., Ryan, T.G., Soda, K.C., Comer, J.J.: `Implantation annealing in GaAs by incoherent light', IOP Conference Series, 1983, 65, p. 619–625.
-
4)
-
K. Ito ,
M. Yoshida ,
M. Otsubo ,
T. Murotani
.
Radiation annealing of Si and S implanted GaAs.
Jpn. J. Appl. Phys.
,
299 -
300
-
5)
-
K. Tabatabaie-Alavi ,
A.N.M. Masum Choudhury ,
C.G. Fonstad ,
J.C. Gelpey
.
Rapid thermal annealing of Be, Si and Zn implanted GaAs using an ultra-high power argon lamp.
Appl. Phys. Lett.
,
505 -
507
-
6)
-
K.S. Lee ,
J.M. Ess ,
M.A. Littlejohn ,
R.B. Benson ,
J. Comas
.
A comparison between atomic concentration profiles and defect density profiles in GaAs annealed after implantation with beryllium.
J. Electron. Mater.
,
185 -
196
-
7)
-
R.T. Blunt ,
R. Sweda ,
I.R. Sanders
.
Recoil profiles produced by ion implantation through dielectric layers.
Vacuum
,
281 -
284
-
8)
-
D.E. Davies ,
P.J. McNally ,
J.P. Lorenzo ,
M. Julian
.
Incoherent annealing of implanted layers in GaAs.
IEEE Electron Device Lett.
,
102 -
103
-
9)
-
Y.K. Yeo ,
Y.S. Park ,
F.L. Pedrotti ,
B.D. Choe
.
Correlation of electrical carrier and atomic profiles of Mg implants in GaAs.
J. Appl. Phys.
,
6148 -
6153
-
10)
-
M. Arai ,
K. Nishiyama ,
N. Watanabe
.
Radiation annealing of GaAs implanted with Si.
Jpn. J. Appl. Phys.
,
L124 -
L126
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