Annealing of Mg implants in GaAs using incoherent radiation

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Annealing of Mg implants in GaAs using incoherent radiation

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© The Institution of Electrical Engineers
Published

Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.

Inspec keywords: ion implantation; annealing; semiconductor technology; III-V semiconductors; gallium arsenide

Other keywords: reduced outdiffusion; incoherent radiation; incoherent light transient annealing; semiconductors; ion implantation; flash lamp annealing; electrical activation; Si3N4 encapsulating layers; Mg implants; GaAs

Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor doping

References

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