Annealing of Mg implants in GaAs using incoherent radiation
Annealing of Mg implants in GaAs using incoherent radiation
- Author(s): R.T. Blunt ; R. Szweda ; M.S.M. Lamb ; A.G. Cullis
- DOI: 10.1049/el:19840309
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- Author(s): R.T. Blunt 1 ; R. Szweda 1 ; M.S.M. Lamb 1 ; A.G. Cullis 2
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View affiliations
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Affiliations:
1: Plessey Research (Caswell) Ltd., Towcester, UK
2: Royal Signals & Radar Establishment, Great Malvern, UK
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Affiliations:
1: Plessey Research (Caswell) Ltd., Towcester, UK
- Source:
Volume 20, Issue 11,
24 May 1984,
p.
444 – 446
DOI: 10.1049/el:19840309 , Print ISSN 0013-5194, Online ISSN 1350-911X
Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
Inspec keywords: annealing; gallium arsenide; semiconductor technology; ion implantation; III-V semiconductors
Other keywords:
Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor doping
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