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Annealing of Mg implants in GaAs using incoherent radiation

Annealing of Mg implants in GaAs using incoherent radiation

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Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.

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