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Fabrication and characteristics of ion-implanted GaAs/GaAlAs integrated injection logic inverter

Fabrication and characteristics of ion-implanted GaAs/GaAlAs integrated injection logic inverter

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An integrated injection logic inverter has been realised in GaAs/GaAlAs material using ion implantation and Zn diffusion. Si ions have been implanted to merge the current source with the switching transistor, whereas the Be implantation provides the base contact. The shallow p+-emitter of the pnp current source has been fabricated by Zn diffusion. Instead of a lateral pnp transistor, which is typical in I2L technology, a vertical arrangement has been used. This type of transistor shows a better current efficiency and can be fabricated with a better uniformity in terms of base width. First results of an I2L inverter with a vertical pnp transistor are shown.

References

    1. 1)
      • H. Beneking , L.M. Su , F. Ponse . Medium-power GaAs bipolar transistors. Microelectron. J. , 5 - 14
    2. 2)
      • P.M. Asbeck , D.L. Miller , W.C. Petersen , C.G. Kirkpatrick . GaAs/GaAlAs heterojunction bipolar transistor with cutoff frequencies above 10 GHz. IEEE Electron Device Lett. , 366 - 368
    3. 3)
      • Asbeck, P.M., Miller, D.L., Anderson, R.J., Eisen, F.H.: `Emitter-coupled logic circuits implemented with heterojunction bipolar transistors', GaAs IC Symposium, 1983, p. 170–173.
    4. 4)
      • H. Kräutle , P. Narozny , H. Beneking . Lateral pnp GaAs bipolar transistor prepared by ion implantation. Electron. Lett. , 259 - 260
    5. 5)
      • H. Kräutle , P. Narozny , H. Beneking . Lateral pnp GaAs bipolar transistor with minimized substrate current. IEEE Electron Device Lett. , 315 - 317
    6. 6)
      • K. Tabatabaie-Alavi . Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral pnp transistor. IEEE Electron Device Lett. , 379 - 381
    7. 7)
      • H. Kroemer . Heterostructures for everything: Device principles of the 1980s. Jpn. J. Appl. Phys. , 9 - 13
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