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Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

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Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20–200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1–2 orders of magnitude.

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