1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation

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1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation

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© The Institution of Electrical Engineers
Published

1.5 μm GaInAsP/InP phase adjusted active distributed reflector laser was proposed and fabricated for stable dynamic single-mode operation. Room-temperature CW operation was obtained with the threshold current of 62 mA. Oscillation at the Bragg wavelength was confirmed experimentally.

Inspec keywords: laser modes; semiconductor junction lasers; gallium compounds; III-V semiconductors; gallium arsenide; distributed Bragg reflector lasers; indium compounds

Other keywords: CW operation; semiconductor junction laser; GaInAsP/InP phase adjusted active distributed reflector laser; threshold current 62 mA; wavelength 1.5 microns; dynamic single-mode operation; Bragg wavelength oscillation

Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems

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