InAsxP1−x/InP photodiodes prepared by molecular-beam epitaxy

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InAsxP1−x/InP photodiodes prepared by molecular-beam epitaxy

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Photodiodes have been made in epitaxial layers of InAsxP1−x grown by molecular-beam epitaxy on InP substrates The As-P ratio of this material system can be adjusted to produce photodetectors for the 2–3 μm-wavelength region. Initial devices exhibit cutoff wavelengths as long as 2 μm.

Inspec keywords: indium compounds; photodetectors; photodiodes; semiconductor epitaxial layers; III-V semiconductors

Other keywords: InAsxP1-x/InP photodiodes; cutoff wavelengths; III-V semiconductors; photodetectors; 2 microns to 3 microns wavelength; As-P ratio; molecular-beam epitaxy

Subjects: Epitaxial growth; II-VI and III-V semiconductors; Photoelectric devices

References

    1. 1)
      • Li Tingye . Advances in optical fiber communications: A historicat perspective. IEEE J. Sel. Areas Commun.
    2. 2)
      • T. Miyashita , T. Manabe . Infrared optical fibers. IEEE J. Quantum Electron.
    3. 3)
      • W.T. Tsang . The growth of bright (300 K) luminescent InAsxP1−x (1.7–2.1 μm) on InP substrates by molecular beam epitaxy. J. AppI. Phys.
    4. 4)
      • Kasper, B.L., Linke, R.A., Campbell, J.C., Dental, A.G., Vodhanel, R.S., Henry, P.S., Kaminow, I.P., Ko, J.S.: `A 161.5 km transmission experiment at 420 Mb/s', 9th European Conference on optical communication, 1983, Geneva, PDP #7.
    5. 5)
      • Yoshida, S.: `Review of new materials for infrared fibers', Technical Digest 4th International Conference on integrated optics and optical fiber communication, 1983, , p. 98.
    6. 6)
      • W.T. Tsang , N.A. Olsson . Preparation of 1.78 μm wave-length Al0.2Ga0.8Sb/GaSb DH laser by molecular beam epitaxy. Appl Phys. Lett.
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