Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

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Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

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© The Institution of Electrical Engineers
Published

Pulse-response characteristics for a heavily zinc-doped surface-emitting InGaAsP/InP DH LED have been studied. 1.6 Gbit/s NRZ modulation has been achieved, and the feasibility of using the surface-emitting LED in a Gbit/s transmission system has been studied.

Inspec keywords: indium compounds; modulation; gallium arsenide; p-n heterojunctions; light emitting diodes; III-V semiconductors

Other keywords: heavily Zn-doped surface-emitting InGaAsP/InP DH LED; Gbit/s modulation; NRZ modulation; pulse-response characteristics

Subjects: Light emitting diodes; Display technology; Semiconductor junctions

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      • H. Grothe , W. Proebster . Influence of Mg doping on cutoff frequency and light output of InGaAsP/InP heterojunction LEDs. IEEE Trans. , 371 - 373
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