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Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

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Pulse-response characteristics for a heavily zinc-doped surface-emitting InGaAsP/InP DH LED have been studied. 1.6 Gbit/s NRZ modulation has been achieved, and the feasibility of using the surface-emitting LED in a Gbit/s transmission system has been studied.

References

    1. 1)
      • D. Gloge . High-speed digital lightwave communication using LEDs and PIN photodiodes at 1.3 μm. Bell Syst. Tech. J. , 1365 - 1382
    2. 2)
      • H. Grothe , W. Proebster . Influence of Mg doping on cutoff frequency and light output of InGaAsP/InP heterojunction LEDs. IEEE Trans. , 371 - 373
    3. 3)
      • Suzuki, A., Nomura, H., Minemura, K.: `500 Mb/s transmission experiment using 1.3 μm wavelength InGaAsP/InP high speed surface emitting LEDs', Tech. Digest of 4th IOOC, 27–30 June 1983, Tokyo, p. 268–269.
    4. 4)
      • S.D. Personik . Receiver design for digital fiber optic communication systems I and II. Bell Syst. Tech. J. , 843 - 886
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