Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
- Author(s): J.P. Bailbe ; A. Marty ; G. Rey
- DOI: 10.1049/el:19840173
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- Author(s): J.P. Bailbe 1 ; A. Marty 1 ; G. Rey 1
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View affiliations
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Affiliations:
1: Laboratoire d'Automatique et d'Analyse des Systemes, Centre National de la Recherche Scientifique, Toulouse, France
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Affiliations:
1: Laboratoire d'Automatique et d'Analyse des Systemes, Centre National de la Recherche Scientifique, Toulouse, France
- Source:
Volume 20, Issue 6,
15 March 1984,
p.
258 – 259
DOI: 10.1049/el:19840173 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.
Inspec keywords: bipolar transistors; degenerate semiconductors; gallium arsenide; III-V semiconductors
Other keywords:
Subjects: Bipolar transistors
References
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1)
- H. Kroemer . Theory of wide-gap emitter for transistors. Proc. IRE , 1535 - 1539
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- D. Dale Kleppinger , F.A. Lindholm . Impurity concentration dependence of the density of states in semiconductors. Solid-State Electron. , 407 - 416
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- R. van Overstraeten , H. de Man , R. Mertens . Transport equations in heavily doped silicon. IEEE Trans. , 290 - 298
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- J.P. Bailbe , A. Marty , H.H. Pham , G. Ray . Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors. IEEE Trans. , 1160 - 1164
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- Shockley, W.: `Circuit element utilizing semiconductor material', US Patent 2569 347, 25 September 1951.
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- W.P. Dumke , J.M. Woodall , V.L. Redeout . GaAs-GaAIAs heterojunction transistor for high frequency operation. Solid-State Electron. , 1339 - 1343
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